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| Advance Product Information February 7, 2006 13 - 15 GHz 4W Power Amplifier Key Features * * * * * * Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm TGA2502 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Fixtured Measured Performance Bias Conditions: Vd = 7V, Idq = 1.3A 30 25 20 Primary Applications * Ku-Band VSAT Transmit Gain (dB) 15 10 5 0 -5 -10 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) , Idq Bias Conditions: Vd = 7V, q = 1.3A 40 35 13GHz Pout (dBm) 30 25 20 15 10 0 3 6 9 Pin (dBm) 12 15 18 14GHz 15GHz 15.5GHz 16GHz 16.5GHz 17GHz Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information February 7, 2006 TGA2502 TABLE I MAXIMUM RATINGS 1/ Symbol V+ I+ PD PIN TCH TM TSTG Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 8V 2.3 A TBD 24 dBm 150 C 320 C -65 C to 150 C Notes 2/ 3/, 4/ 1/ 2/ 3/ 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information February 7, 2006 TGA2502 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) PARAMETER Drain Operating Voltage Quiescent Current Small Signal Gain Gain Flatness (Freq=13.5 - 15 GHz) Input Return Loss (Linear Small Signal) Output Return Loss (Linear Small Signal) Reverse Isolation CW Output Power @ Psat at 14.5Ghz Power Add Efficiency @ Psat P1dB Temperature Coeff. TC (-40 to + 70 C) 0 TYPICAL 7 1.3 25 0.1 16 16 <-50 36 30 -0.01 UNITS V A dB dB/100MHz dB dB dB dBm % dB/0C TABLE IV THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 7 V Id = 1.3 A Pdiss = 9.1 W TCH O ( C) 123 RTJC (qC/W) 5.8 TM (HRS) 1.2E+7 RJC Thermal Resistance (channel to Case) Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information February 7, 2006 TGA2502 Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A 5% 30 25 20 Gain (dB) 15 10 5 0 -5 -10 12 12.5 13 13.5 14 14.5 Frequency (GHz) 15 15.5 16 40 35 13GHz Pout (dBm) 30 25 20 15 10 0 3 6 9 Pin (dBm) 12 15 18 14GHz 15GHz 15.5GHz 16GHz 16.5GHz 17GHz TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information February 7, 2006 TGA2502 Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A 5% 0 -5 -10 S11 (dB) -15 -20 -25 -30 -35 8 10 12 14 16 18 20 22 Frequency (GHz) 0 -5 -10 -15 S22 (dB) -20 -25 -30 -35 -40 -45 8 10 12 14 16 18 20 22 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information February 7, 2006 TGA2502 Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A 5% 48 45 42 39 36 33 30 10 15 20 25 30 35 13 GHz 13.5 Ghz 14 GHz 14.5 GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz TOI (dBm) Fundamental output power per tone (dBm) 70 60 50 13 GHz 13.5 GHz 14 GHz 14.5 GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz IMD3 (dBc) 40 30 20 10 0 10 15 20 25 30 35 Fundamental output power per tone (dBm) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information February 7, 2006 TGA2502 Chip & Assembly Diagram 1 PF PS VD RF OUT RF IN VG VD PS Assembly Note: 10 470 PF * AuSn Vacuum Re-flow 1 PF TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information Mechanical Drawing February 7, 2006 TGA2502 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information February 7, 2006 TGA2502 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9 |
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